Dual-Gate Engineering Unlocks Enhanced Short-Wave Infrared Detection in Novel Alloy Phototransistors
Scientists have engineered a breakthrough in short-wave infrared photodetection using tellurium-selenium alloy transistors. The dual-gate architecture reportedly enables superior performance compared to conventional single-gate devices, with potential applications in imaging and sensing technologies.
Breakthrough in Infrared Photodetection Technology
Researchers have developed an advanced phototransistor technology that significantly enhances short-wave infrared (SWIR) detection capabilities, according to recent scientific reports. The innovation centers on dual-gate engineered phototransistors utilizing a tellurium-selenium (Te/Se) alloy channel layer, which sources indicate can detect light at 1300 nm with improved efficiency compared to existing technologies.